V290BJ1-LE1 データシート PDFこの部品の機能は「Tft Lcd Module」です。 |
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部品番号 |
V290BJ1-LE1 TFT LCD Module Global LCD Panel Exchange Center www.panelook.com PRODUCT SPECIFICATION ϭ Tentative Specification ϭ Preliminary Specification Ϯ Approval Specification MODEL NO.: V290BJ1 SUFFIX: LE1 Customer: AP CHIMEI Innolux |
文字列「 V290BJ1LE1 」「 290BJ1 」で始まる検索結果です。 |
部品説明 |
2SC2901 NPN SILICON TRANSISTOR NEC |
2SC2901 NPN Silicon Epitaxial Planar Transistor ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different p SEMTECH |
2SC2901 NPN Silicon Epitaxial Planar Transistor 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different pin Bluecolour |
2SC2901 NPN Silicon Epitaxial Planar Transistor ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in differen PACO |
2SK2901-01L N-CHANNEL SILICON POWER MOS-FET 2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof T-Pack(L) FUJI POWER MOS-FET T-Pack(S) 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 0.8 —0.1 5.08 2.7 + Fuji Electric |
2SK2901-01S N-CHANNEL SILICON POWER MOS-FET 2SK2901-01L,S N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof T-Pack(L) FUJI POWER MOS-FET T-Pack(S) 10 +0.5 0.9 ±0.3 4.5 ±0.2 1.32 1.5 Max 9.3 ±0.5 1.2 ±0.2 0.8 —0.1 5.08 2.7 + Fuji Electric |
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