V20K320-5 データシート PDFこの部品の機能は「Metal Oxide Varistor」です。 |
検索結果を表示する |
部品番号 |
V20K320-5 Metal Oxide Varistor Metal Oxide Varistor ROHS series Part Number Code. Example : V 10 K (1) (2) (3) (1) Varistor (2) Nominal Diameter : 05 : 5mm 07 : 7mm 10 : 10mm 14 : 14mm 20 : 20mm (3) Tolerance of Varistor Voltage : ITG |
文字列「 V20K3205 」「 20K320 」で始まる検索結果です。 |
部品説明 |
HV20320 Low Charge Injection 8-Channel High Voltage Analog Switch Supertex inc. Low Charge Injection 8-Channel High Voltage Analog Switch HV20320 Features ►►HVCMOS® technology for high performance ►►Very low quiescent power dissipation (-10µA) ►►Output on-resistance typically 22Ω ►►Low parasitic capacitances ►►DC to 50M Supertex Inc |
HV20320 (HV2xx) Low Charge Injection 8-Channel High Voltage Analog Switches HV220/HV20220/HV20320 Low Charge Injection 8-Channel High Voltage Analog Switches Features HVCMOS® technology for high performance Very low quiescent power dissipation – 10µA Output on-resistance typically 22 ohms Low parasitic capacitances DC to 10MHz analog signal frequency Supertex |
HV20320PJ Low Charge Injection 8-Channel High Voltage Analog Switch Supertex inc. Low Charge Injection 8-Channel High Voltage Analog Switch HV20320 Features ►►HVCMOS® technology for high performance ►►Very low quiescent power dissipation (-10µA) ►►Output on-resistance typically 22Ω ►►Low parasitic capacitances ►►DC to 50M Supertex Inc |
K7A203200A 64Kx32-Bit Synchronous Pipelined Burst SRAM PRELIMINARY K7A203200A Document Title 64Kx32-Bit Synchronous Pipelined Burst SRAM, 64Kx32 Synchronous SRAM Revision History Rev. No. 0.0 1.0 History Final spec release. Add VDDQ Supply voltage( 2.5V ) Draft Date Nov. 10. 1998 Dec. 02. 1998 Remark Final Fina Samsung semiconductor |
K7A203200B-QC14 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM K7A203600B K7A203200B K7A201800B Document Title Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Add tCYC 250,225, 200MHz bin. Draft Date Dec. 10. 2001 Samsung semiconductor |
K7A203200B-QCI14 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM K7A203600B K7A203200B K7A201800B Document Title Preliminary 64Kx36/x32 & 128Kx18 Synchronous SRAM 64Kx36 & 64Kx32 & 128Kx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No 0.0 0.1 History 1. Initial draft 1. Add tCYC 250,225, 200MHz bin. Draft Date Dec. 10. 2001 Samsung semiconductor |
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