V180ZA10P データシート PDFこの部品の機能は「Varistors」です。 |
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部品番号 |
V180ZA10P Varistors VARISTOR PRODUCTS Varistor Products Low to Medum Voltage, Radial Lead RoHS Pb ZA Varistor Series The ZA Series of transient voltage surge suppressors are radial-lead varistors (MOVs) designed for use Littelfuse |
文字列「 V180ZA10 」「 180ZA10P 」で始まる検索結果です。 |
部品説明 |
HA118010MP 4-Channel Processor for Video Cameras w w a D . w S a t e e h U 4 t m o .c w w .D w t a S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c Hitachi |
LLE18010X NPN microwave power transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resis NXP Semiconductors |
MHPA18010 CDMA BAND RF LINEAR LDMOS AMPLIFIER SEMICONDUCTOR TECHNICAL DATA MOTOROLA The RF Line Freescale Semiconductor, Inc. Order this document by MHPA18010/D CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequenc Motorola Semiconductors |
MHPA18010N CDMA Band RF Linear LDMOS Amplifier Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 4, 5/2006 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provi Freescale Semiconductor |
PTF180101 LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellen Infineon Technologies AG |
PTF180101S LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz PTF180101 LDMOS RF Power Field Effect Transistor 10 W, 1805–1880 MHz, 1930–1990 MHz 10 W, 2110–2170 MHz Description The PTF180101 is a 10 W, internally–matched GOLDMOS FET device intended for EDGE applications in the DCS/PCS band. Full gold metallization ensures excellen Infineon Technologies AG |
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