TSZU52C13 データシート PDFこの部品の機能は「150mw Smd Zener Diode」です。 |
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部品番号 |
TSZU52C13 150mW SMD Zener Diode Pb RoHS COMPLIANCE Preliminary TSZU52C2 – TSZU52C39 150mW SMD Zener Diode 0603 Features 150mW Power dissipation. High voltages from 2 ~ 39V Designed for mounting on small surface Extre Taiwan Semiconductor |
文字列「 TSZU52C13 」「 52C13 」で始まる検索結果です。 |
部品説明 |
2SC5213 NPN Transistor Free Datasheet http:/// Free Datasheet http:/// Free Datasheet http:/// ‰c‹Æ–{•”‰c‹ÆŠé‰æ•” http://www.idc-com.co.jp •§ 854-0065 ’·•èŒ§ŠÐ‘•Žs’Ëv—t’¬ 6-41 ˆÀ‘S•� ETC |
597-5213-4xx (597-5xxx-4xx) Surface Mount LED ® NEW Dialight Surface Mount LED 0805 Type Package 1.24 [.049] .36 [.014] 2.01 [.079] .36 [.014] CATHODE MARK 1.30 [.051] 1.19 [.047] .79 [.031] .30 [.012] 597-5x11-4xx 597-5202-4xx PART NO.* 597-5111-4xx 597-5202-4xx 597-5311-4xx 597-5411-4xx COLOR Red Dialight |
ACE5213A P-Channel Enhancement Mode MOSFET ACE5213A P-Channel Enhancement Mode MOSFET Description The ACE5213A is the P-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and ACE Technology |
ADG5213 (ADG5212 / ADG5213) Quad SPST Switches www.DataSheet4U.net High Voltage Latch-Up Proof, Quad SPST Switches ADG5212/ADG5213 FEATURES Latch-up proof 3 pF off source capacitance 5 pF off drain capacitance 0.07 pC charge injection Low leakage: 0.2 nA maximum at 85ºC ±9 V to ±22 V dual-supply operation 9 V to 40 V sing Analog Devices |
BD5213-2C Free Time Delay Setting CMOS Voltage Detector (Reset) IC Datasheet Voltage Detector (Reset) IC Series for Automotive Application Free Time Delay Setting CMOS Voltage Detector (Reset) IC BD52xx-2C Series and BD53xx-2C Series General Description ROHM's BD52xx-2C and BD53xx-2C series are highly accurate, low current consumption Voltage ROHM Semiconductor |
BTD5213M3 NPN Planar Transistor CYStech Electronics Corp. NPN Epitaxial Planar Transistor Spec. No. : C310M3 Issued Date : 2003.06.27 Revised Date : Page No. : 1/3 BTD5213M3 Features • High VCEO, VCEO=80V • High IC, IC(DC)=1A • Low VCE(sat) • Good current gain linearity • Complementary to BTB1260M3 Cystech |
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