Datasheet TSF10N60S Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TSF10N60S	N-Channel MOSFET TSP10N60S / TSF10N60S/TSB10N60S 600V N-Channel MOSFET September, 2013 SJ-FET TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower ga	Truesemi

TSF10N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TSF10N60M	600V N-Channel MOSFET TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,	Truesemi
TSF10N65M	N-Channel MOSFET TSP10N65M / TSF10N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,	Truesemi
TSF10N60C	600V Insulated N-Channel Type Power MOSFET TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability ■ High ruggedness ■ 100% Avalanche Tested 1. Gate { { 2. Drain	Thinki Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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