| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | TMD2N60AZG | N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK TMD2N60AZ(G)/TMU2N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 2.0A < 4.0W I-PAK Device TMD2N60AZ / TMU2N60AZ TMD2N60AZG / TMU2N60AZG Package D-PAK/I-PAK D-PAK/I-PAK Absolute Maxim |
 TRinno |
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| Part No | Description ( Function) | Manufacturers | |
| TMD2N60AZ | N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Improved ESD performance D-PAK TMD2N60AZ(G)/TMU2N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 2.0A < 4.0W I-PAK D |
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| TMD2N60Z | N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TMD2N60Z(G)/TMU2N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 2A <4.0W I-PAK Device TMD2N60Z / TMU2N60Z TMD2N60Z |
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| TMD2N60ZG | N-channel MOSFET Features Low gate charge 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D-PAK TMD2N60Z(G)/TMU2N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 2A <4.0W I-PAK Device TMD2N60Z / TMU2N60Z TMD2N60Z |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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