TD-93B データシート PDFこの部品の機能は「MICrowave Noise Tubes & Noise Sources」です。 |
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部品番号 |
TD-93B MICROWAVE NOISE TUBES & NOISE SOURCES MICROWAVE NOISE TUBES & NOISE SOURCES TD/TN Series DESCRIPTION CP Clare’s TD Series of gas discharge microwave noise tubes and TN Series of gas discharge microwave noise sources are the element in Clare |
文字列「 TD93 」「 TD-9 」で始まる検索結果です。 |
部品説明 |
MBM29DL161TD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available wi Fujitsu |
MBM29DL162TD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available wi Fujitsu |
MBM29DL163TD-90 16M (2M x 8/1M x 16) BIT Dual Operation FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29DL16XTD/BD -70/90 s FEATURES Dual Operation • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available wit Fujitsu Media Devices |
MBM29DL164TD-90 FLASH MEMORY CMOS 16M (2M x 8/1M x 16) BIT FUJITSU SEMICONDUCTOR DATA SHEET DS05-20874-7E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT Dual Operation MBM29DL16XTD/BD -70/90 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available wi Fujitsu |
MBM29DL321TD-90 32M (4M x 8/2M x 16) BIT Dual Operation FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank si Fujitsu |
MBM29DL322TD-90 32M (4M x 8/2M x 16) BIT Dual Operation FUJITSU SEMICONDUCTOR DATA SHEET DS05-20873-4E FLASH MEMORY CMOS 32M (4M × 8/2M × 16) BIT Dual Operation MBM29DL32XTD/BD -80/90/12 s FEATURES • 0.33 µm Process Technology • Simultaneous Read/Write operations (dual bank) Multiple devices available with different bank si Fujitsu |
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