TOSHIBA CONFIDENTIAL TC58TEG5DCJTAx0 TOSHIBA NAND memory Toggle DDR1.0 Technical Data Sheet Rev. 0.2 2012 – 03 – 01 TOSHIBA Semiconductor & Storage Products Memory Division 0 TENTATIVE 2012-03

TOSHIBA TC551001BPL/BFL/BFTL/BTRL-70/85/10 SILICON GATE CMOS 131,072 WORD x 8 BIT STATIC RAM Description The TC551 001 BPL is a 1,048,576 bit CMOS static random access memory organized as 131,072 words by 8 bits and operated from a single 5V power supply. Advanced circuit tech

TOSHIBA TC55257CPL/CFL/CSPL/CFIL/CTRL-70L/85L/10L SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPL is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advance

TOSHIBA 112554101]-20/25/30 SILICON GATE CMOS 1,048,576 WORD x 4 BIT SEPARATE 1/0 CMOS STATIC RAM PRELIMINARY Description The TC5541 01 J is a 4,194,304 bit high speed CMOS static random access memory organized as 1,048,576 words by 4 bits and operated from a single 5V supply

TOSHIBA TC55B88P/J-10/12 SILICON GATE BiCMOS 8,192 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B88P/J is a 65,536 bit high speed BiCMOS static random access memory organized as 8,192 words by 8 bits and operated from a single 5V supply. Toshiba's BiCMOS technology and

TOSHIBA TC5I8I29APLIAFLIAFWL-80LVII0LVI I2LV TC5I8I29AF1L-80LVII0LVI I2LV SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129A-LV is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518129A-LV utilizes a o

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