TC5081P IL08D C-MOS PHASE COMPARATOR —SIDE VIEW— PHASE COMPARATOR 1 A OUT 2 A IN 3 PD OUT 4 PHASE OUT VDD 5 6 NC 7 FS IN 8 FR IN GND 9 PHASE COMPARATOR TIMING CHART FS IN FR IN PD O

TOSHIBA 1l:5589P/]-15/20/25/35 SILICON GATE CMOS 8,192 WORD x 9 BIT CMOS STATIC RAM Description The TC5589P/J is a 73,728 bit high speed CMOS static random access memory organized as 8,192 words by 9 bits and operated from a single 5V supply. Toshiba's advanced CMOS technolo

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511001 P/J/Z-S5, TC511001 P/J/Z-l0 TC511 001 P/J/Z-12 The TC5ll00lP/J/Z is the new generation dynamic R&~ organized 1,048,576 ~vords by 1 bit. The TC5ll00lP/J/Z utilizes TOSHIBA's ca

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TOSHIBA 1l:55257CPI/CF1/CSPI/CF1l/C1lU~5/10 SILICON GATE CMOS PRELIMINARY 32,768 WORD x 8 BIT STATIC RAM Description The TC55257CPI is a 262,144 bit CMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V power supply. Advanced circ

TC55NEM208AFPN/AFTN55,70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabri