TB2912HQ データシート PDFこの部品の機能は「Maximum Power 41 W Btl X 4-ch Audio Power IC」です。 |
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部品番号 |
TB2912HQ Maximum Power 41 W BTL x 4-ch Audio Power IC TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic TB2912HQ TB2912HQ Maximum Power 41 W BTL × 4-ch Audio Power IC The TB2912HQ is 4ch audio amplifier for car audio application. This IC Toshiba Semiconductor |
文字列「 TB2912 」「 2912HQ 」で始まる検索結果です。 |
部品説明 |
2912A PCM Transmit / Receive Filter Intel |
2SC2912 Epitaxial Planar Silicon Transistor This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manu Sanyo |
2SK2912 Silicon N Channel MOS FET High Speed Power Switching 2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2 Hitachi Semiconductor |
2SK2912L Silicon N Channel MOS FET High Speed Power Switching 2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2 Hitachi Semiconductor |
2SK2912S Silicon N Channel MOS FET High Speed Power Switching 2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-495 1st. Edition Features • Low on-resistance R DS = 15 mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D 1 1 G 2 3 2 3 1. Gate 2 Hitachi Semiconductor |
AM27PS29125BLA 16/384-BIT (2048 x 8) BIPOLAR PROM Advanced Micro Devices |
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