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Datasheet T3055EL Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | T3055EL | MMFT3055EL
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT3055EL/D
Medium Power Field Effect Transistor
N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount
This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in | Motorola Semiconductors | data |
T30 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | T3048 | T3/DS3/E3/STS-1 TRANSFORMERS T3/DS3/E3/STS-1 TRANSFORMERS
Eight Transformers Designed for T3, DS3, E3 and STS-1 Interface
Eight transformers in a surface mount package
Models matched to leading transceiver ICs
Return loss meets requirements of G.703
Recognized by UL1950 (some parts pending approval)
Isolation voltage: 1500Vrms
Pulse transformer | | |
2 | T3048NL | T3/DS3/E3/STS-1 TRANSFORMERS T3/DS3/E3/STS-1 TRANSFORMERS
Eight Transformers Designed for T3, DS3, E3 and STS-1 Interface
Eight transformers in a surface mount package
Models matched to leading transceiver ICs
Return loss meets requirements of G.703
Recognized by UL1950 (some parts pending approval)
Isolation voltage: 1500Vrms
Pulse transformer | | |
3 | T3049 | T3/DS3/E3/STS-1 TRANSFORMERS T3/DS3/E3/STS-1 TRANSFORMERS
Eight Transformers Designed for T3, DS3, E3 and STS-1 Interface
Eight transformers in a surface mount package
Models matched to leading transceiver ICs
Return loss meets requirements of G.703
Recognized by UL1950 (some parts pending approval)
Isolation voltage: 1500Vrms
Pulse transformer | | |
4 | T3049NL | T3/DS3/E3/STS-1 TRANSFORMERS T3/DS3/E3/STS-1 TRANSFORMERS
Eight Transformers Designed for T3, DS3, E3 and STS-1 Interface
Eight transformers in a surface mount package
Models matched to leading transceiver ICs
Return loss meets requirements of G.703
Recognized by UL1950 (some parts pending approval)
Isolation voltage: 1500Vrms
Pulse transformer | | |
5 | T3055EL | MMFT3055EL
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMFT3055EL/D
Medium Power Field Effect Transistor
N–Channel Enhancement Mode Silicon Gate TMOS E–FETt SOT–223 for Surface Mount
This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in Motorola Semiconductors data | | |
6 | T30N60BD1 | IXST30N60BD1 High Speed IGBT with Diode
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1
VCES IC25
VCE(sat)
Short Circuit SOA Capability
tfi
= 600 V = 55 A = 2.0 V = 140 ns
Symbol VCES VCGR
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C IXYS Corporation data | |
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Número de pieza | Descripción | Fabricantes | |
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