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Datasheet SW1N55D Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SW1N55D   MOSFET ( Transistor )

SAMWIN SW1N55D N-channel IPAK MOSFET Features TO-251 ■ High ruggedness ■ RDS(ON) (Max6.5Ω)@VGS=10V ■ Gate Charge (Typical 7nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS
SEMIPOWER
SEMIPOWER		 datasheet SW1N55D pdf

SW1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SW1N60A

SSW1N60A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
SW1N70A

MOSFET ( Transistor )

SAMWIN SW1N70A N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 15 Ω)@VGS=10V ■ Gate Charge (Max 5nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-92 12 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanc
 SEMIPOWER
SEMIPOWER		 datasheet pdf - SEMIPOWER
SW1N60C

N-channel D-PAK/I-PAK/TO-92 MOSFET

SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET Features TO-251 TO-252 TO-92 ■ High ruggedness ■ RDS(ON) (Max 9 Ω)@VGS=10V ■ Gate Charge (Typical 5.6nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested 12 3 12 3 1 2 3 1. Gate 2. Drain 3. Source General
 SAMWIN
SAMWIN		 datasheet pdf - SAMWIN


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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