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Datasheet SVF4N60FG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SVF4N60FG   600V N-CHANNEL MOSFET

SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved gua
 SILAN MICROELECTRONICS
SILAN MICROELECTRONICS		 datasheet SVF4N60FG pdf

SVF4N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SVF4N65F

650V N-channel enhancement mode MOSFET

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improv
 SL
SL		 datasheet pdf - SL
SVF4N60F

600V N-CHANNEL MOSFET

SVF4N60D/F/FG/T/K/M/MJ_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N60D/F/FG/T/K/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell
SILAN MICROELECTRONICS
SILAN MICROELECTRONICS		 datasheet pdf - SILAN MICROELECTRONICS
SVF4N65D

650V N-channel enhancement mode MOSFET

SVF4N65T/F(G)/M_Datasheet 4A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N65T/F(G)/M is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improv
 SL
SL		 datasheet pdf - SL


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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