Datasheet SVF2N65FG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SVF2N65FG	650V N-CHANNEL MOSFET SVF2N65F/FG/N/MJ 说明书 2A、650V N沟道增强型场效应管描述 SVF2N65F/FG/N/MJ N 沟道增强型高压功率 MOS 场效应晶体管采用士兰微电子 F-CellTM 平面高压 VDMOS 工艺技术制造。先进的工艺及条状的原胞设计结构使得该产品具有较低的导通电	SL

SVF2N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SVF2N60F	600V N-CHANNEL MOSFET SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell TM structure DMOS technology. The improved planar stripe cell and the improv	SL
SVF2N65F	650V N-CHANNEL MOSFET SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ri	SL
SVF2N60D	600V N-CHANNEL MOSFET SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell TM structure DMOS technology. The improved planar stripe cell and the improv	SL

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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