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Datasheet STP5NA80 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | STP5NA80 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP5NA80 STP5NA80FI
s s s s s s s
V DSS 800 V 800 V
R DS( on) < 2.4 Ω < 2.4 Ω
ID 4.7 A 2.8 A
TYPICAL RDS(on) = 1.8 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC |
 ST Microelectronics |
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| 4 | STP5NA80 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ( DataSheet : )
STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP5NA80 STP5NA80FI
s s s s s s s
VDSS 800 V 800 V
R DS(on) < 2.4 Ω < 2.4 Ω
ID 4.7 A 2.8 A
TYPICAL RDS(on) = 1.8 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED |
ST Microelectronics |
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| 3 | STP5NA80 | Trans MOSFET N-CH 800V 4.7A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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| 2 | STP5NA80FI | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR ( DataSheet : )
STP5NA80 STP5NA80FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP5NA80 STP5NA80FI
s s s s s s s
VDSS 800 V 800 V
R DS(on) < 2.4 Ω < 2.4 Ω
ID 4.7 A 2.8 A
TYPICAL RDS(on) = 1.8 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED |
ST Microelectronics |
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