|
|
Datasheet STGP6M65DF2 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | STGP6M65DF2 | Trench gate field-stop IGBT STGP6M65DF2
Trench gate field-stop IGBT, M series 650 V, 6 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 6 A Tight parameter distribution Safer paralleling Low thermal |  STMicroelectronics | igbt |
STG Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | STG2017 | Dual N-Channel E nhancement Mode Field Effect Transistor
S T G 2017
S amHop Microelectronics C orp. May,18 2005
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( mW ) Max
ID
7A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
20 @ V G S = 4.5V 28 @ V G S = 2.5V
 SamHop Microelectronics transistor | | |
| 2 | STG2454 | Dual N-Channel Enhancement Mode Field Effect Transistor Gr Pr
STG2454
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
24V
ID
7A
R DS(ON) (m Ω) Max
17 @ VGS=4.0V 29 @ VGS=2.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD SamHop Microelectronics transistor | | |
| 3 | STG2507 | Dual P-Channel E nhancement Mode Field Effect Transistor
S T G 2507
S amHop Microelectronics C orp. May,10 2005
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
-20V
F E AT UR E S
( mW ) Max
ID
6.2A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
17 @ V G S = -4.5V 25 @ V G S = SamHop Microelectronics transistor | | |
| 4 | STG3155 | Low voltage 0.5 Ohm Max single SPDT switch STG3155
Low voltage 0.5Ω Max single SPDT switch with break-before-make feature
Features
■
High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 0.5Ω (TA = 25ºC) a  ST Microelectronics data | | |
| 5 | STG3157 | Low voltage low on-resistance SPDT switch STG3157
Low voltage low on-resistance SPDT switch with break-before-make feature
Features
■ High speed: – tPD = 0.3 ns (max) at VCC = 4.5 V – tPD = 0.8 ns (max) at VCC = 3.0 V – tPD = 1.2 ns (max) at VCC = 2.3 V
■ Ultra low power dissipation: – ICC = 1 µA (max) at TA = 85 °C
■ Low o ST Microelectronics data | | |
| 6 | STG3159 | single SPDT switch
STG3159
Low voltage 1Ω max single SPDT switch with break-before-make feature
Features
■
High speed: – tPD = 1.5ns (Typ.) at VCC = 3.0V – tPD = 1.5ns (Typ.) at VCC = 2.3V Ultra low power dissipation: – ICC = 0.2µA (Max.) at TA = 85°C Low "ON" resistance: – RON = 1. STMicroelectronics data | | |
| 7 | STG3220 | Low voltage high bandwidth dual SPDT switch
STG3220
Low voltage high bandwidth dual SPDT switch
Features
■ ■
Ultra low power dissipation: – ICC = 1 μA (max.) at TA = 85 °C Low "ON" resistance: – RON = 4.8 Ω (TA = 25 ºC) at VCC = 4.3 V – RON = 5.9 Ω (TA = 25 ºC) at VCC = 3.0 V Wide operating voltage range: ST Microelectronics data | | |
| 8 | STG3384 | dual SPST switch
STG3384
Low voltage 0.9Ω max dual SPST switch with break before make feature
Features
■
Low quiescent supply current: Max ± 50µA for V1IN, V2IN = 1.80V at VCC = 4.3V Ultra low power dissipation: ICC = 0.2µA (Max) at TA = 85°C, VIN = 0V Switch: low "ON" resistance: – R STMicroelectronics data | | |
| 9 | STG3482 | Low voltage dual SP4T switch
STG3482
Low voltage dual SP4T switch
Features
■ ■
Ultra low power dissipation: – ICC = 0.1 μA (max.) at TA = 25 °C Low “ON” resistance: – RON = 4.6 Ω (TA = 25 °C) at VCC = 4.3 V – RON = 5.8 Ω (TA = 25 °C) at VCC = 3.0 V Wide operating voltage range: – VCC STMicroelectronics data | |
| Esta página es del resultado de búsqueda del STGP6M65DF2. Si pulsa el resultado de búsqueda de STGP6M65DF2 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |