STDLED656, STFILED656, STPLED656, STULED656 N-channel 650 V, 1.1 Ω typ., 6.0 A Power MOSFET in DPAK, I2PAKFP, TO-220 and IPAK packages Datasheet − preliminary data Features TAB Order codes VDS

STD86N3LH5 N-channel 30 V, 0.0045 Ω , 80 A, DPAK STripFET™ V Power MOSFET Features Type STD86N3LH5 ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.005 Ω ID 80 A 3 1 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche rugged

STD2NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STD2NA50 V DSS 500 V R DS(on) <4Ω ID 2.2 A s s s s s s s s s TYPICAL RDS(on) = 3.25 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSI

NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N−Channel, DPAK Features • Low RDS(on) • High Current Capability • Low Gate Charge • STD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPA

Green Product STU09N25 STD09N25 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 250V ID 7.5A R DS(ON) ( Ω) Max 0.4 @ VGS=10V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-25

® STD45NF03L N - CHANNEL 30V - 0.011 Ω - 45A DPAK STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD45NF03L s s V DSS 30 V R DS(o n) < 0.013 Ω ID 45 A s TYPICAL RDS(on) = 0.011 Ω LOW THRESHOLD DRIVE ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL

N-CHANNEL 60V - 0.042 Ω - 19A IPAK/DPAK STripFET™ POWER MOSFET TYPE STD19NE06 s s s s s STD19NE06 VDSS 60 V RDS(on) <0.050 Ω ID 19 A s TYPICAL RDS(on) = 0.042 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175 oC OPERATING TEMPERATURE THROUGH-HOLE IPAK (TO-251)