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Datasheet STD8NM60N Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | STD8NM60N | N-channel Power MOSFET STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET
Features
Type
VDSS (@Tjmax) 650 V 650 V 650 V 650 V
RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω
ID
3
3 2 1
1 2
S | STMicroelectronics | mosfet |
2 | STD8NM60N-1 | N-channel Power MOSFET STD8NM60N - STD8NM60N-1 STF8NM60N - STP8NM60N
N-channel 600 V - 0.56 Ω - 7 A - TO-220 - TO-220FP - IPAK - DPAK second generation MDmesh™ Power MOSFET
Features
Type
VDSS (@Tjmax) 650 V 650 V 650 V 650 V
RDS(on) max <0.65 Ω <0.65 Ω <0.65 Ω <0.65 Ω
ID
3
3 2 1
1 2
S | STMicroelectronics | mosfet |
3 | STD8NM60ND | Power MOSFET, Transistor STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK
Features
Type STD8NM60ND STF8NM60ND STP8NM60ND STU8NM60ND VDSS (@Tjmax) 650 V 650 V 650 V 650 V RDS(on) max < 0.70 Ω < 0.70 Ω < 0.70 Ω < 0.70 Ω ID
3
3 2 1
1 | STMicroelectronics | mosfet |
STD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | STD01N | Darlington Transistors for Audio Amplifiers STD01N and STD01P
Darlington Transistors for Audio Amplifiers
Features and Benefits
▪ Built-in temperature compensation diodes ▪ High power (100 W) handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation dio Sanken electric transistor | | |
2 | STD01P | Darlington Transistors for Audio Amplifiers STD01N and STD01P
Darlington Transistors for Audio Amplifiers
Features and Benefits
▪ Built-in temperature compensation diodes ▪ High power (100 W) handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation dio Sanken electric transistor | | |
3 | STD02N | Darlington Transistors for Audio Amplifiers STD02N and STD02P
Darlington Transistors for Audio Amplifiers
Features and Benefits
▪ Built-in temperature compensation diodes ▪ High power (130 W) handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation dio Sanken electric transistor | | |
4 | STD02P | Darlington Transistors for Audio Amplifiers STD02N and STD02P
Darlington Transistors for Audio Amplifiers
Features and Benefits
▪ Built-in temperature compensation diodes ▪ High power (130 W) handling in a small package (TO-3P), for minimized heat sink requirements ▪ Built-in drivers and temperature compensation dio Sanken electric transistor | | |
5 | STD03205 | DC Solid State Relay S/MOD/STD03205/B/14/05/2002
Relais Statique DC DC Solid State Relay
• Compatibilité du brochage avec les Relais Electro-mécaniques . • Commande DC Non polarisée. • Sortie DC. • Importantes surcharges en courants admissibles. • Haute immunité aux perturbations extérieures. • Ecrête celduc-relais relay | | |
6 | STD03505 | DC Solid State Relay S/MOD/STD03505/C/14/05/2002
Relais Statique DC DC Solid State Relay
• Compatibilité du brochage avec les Relais Electro-mécaniques . • Commande DC Non polarisée. • Sortie DC. • Importantes surcharges en courants admissibles. • Haute immunité aux perturbations extérieures. • Ecrête celduc-relais relay | | |
7 | STD03L01 | N-Channel Logic Level Enhancement Mode Field Effect Transistor Green Product
STU03L01 STD03L01
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
2A
R DS(ON) ( Ω) Max
0.9 @ VGS=10V 1.1 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. SamHop Microelectronics transistor | |
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SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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