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Datasheet STD15N06L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STD15N06L   N-CHANNEL POWER MOSFET

STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD15N06L s s s s s s s s V DSS 60 V R DS( on) < 0.1 Ω ID 15 A s s TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPA
 ST Microelectronics
ST Microelectronics		 datasheet STD15N06L pdf

STD15N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STD15NF10

N-CHANNEL POWER MOSFET

® STD15NF10 N - CHANNEL 100V - 0.073Ω - 15A TO-252 LOW GATE CHARGE STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STD15NF10 s s s s V DSS 100 V R DS( on ) < 0.08 Ω ID 15 A s TYPICAL RDS(on) = 0.073 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORI
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STD15N06L

N-CHANNEL POWER MOSFET

STD15N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STD15N06L s s s s s s s s V DSS 60 V R DS( on) < 0.1 Ω ID 15 A s s TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHAR
 ST Microelectronics
ST Microelectronics		 datasheet pdf - ST Microelectronics
STD15N65M5

N-channel Power MOSFET

STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in D2PAK and DPAK packages Datasheet — production data Features Order codes STB15N65M5 STD15N65M5 VDS @ TJmax RDS(on) max ID 710 V < 0.34 Ω 11 A ■ Worldwide best RDS(on) * area ■ Hig
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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