Datasheet STC6602ST6RG Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STC6602ST6RG	Dual N & P Channel Enhancement Mode MOSFET STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resista	Stanson Technology

STC6602ST Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STC6602ST6RG	Dual N & P Channel Enhancement Mode MOSFET STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minim	Stanson Technology

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Número de pieza	Descripción	Fabricantes	PDF
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