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Datasheet STB8NA50 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 STB8NA50   N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB8NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB8NA50 n n n n n n n n V DSS 500 V R DS(on ) < 0.85 Ω ID 8 A n TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE
STMicroelectronics
STMicroelectronics		 datasheet STB8NA50 pdf

STB8N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
STB8NM60N

N-CHANNEL Power MOSFET

STx8NM60N N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS (@Tjmax) RDS(on) max ID STB8NM60N t(s)STD8NM60N cSTD8NM60N-1 uSTF8NM60N rodSTP8NM60N 650 V 650 V 650 V 650 V 650 V < 0.65 Ω < 0.65 Ω < 0.65 Ω < 0
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
STB8NC70Z

N-CHANNEL MOSFET

STP8NC70Z - STP8NC70ZFP STB8NC70Z - STB8NC70Z-1 N-CHANNEL 700V - 0.90Ω - 6.8A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP8NC70Z/FP STB8NC70Z/-1 s s VDSS 700V 700V RDS(on) < 1.2 Ω < 1.2 Ω ID 6.8 A 6.8 A 1 3 s s s TYPICAL RDS(on) = 0.9 Ω EXTRE
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics
STB8NC50-1

N-CHANNEL MOSFET

N-CHANNEL 500V - 0.7 Ω - 8A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP(B)8NC50(-1) STP8NC50FP s s s s s STP8NC50 - STP8NC50FP STB8NC50-1 VDSS 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω ID 8A 8A 3 1 2 TYPICAL RDS(on) = 0.7 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% A
 STMicroelectronics
STMicroelectronics		 datasheet pdf - STMicroelectronics


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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