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Datasheet STB4NC60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | STB4NC60 | N-CHANNEL MOSFET N-CHANNEL 600V - 1.8Ω - 4.2A D2PAK PowerMesh™II MOSFET
TYPE STB4NC60
s TYPICAL
s s s s
STB4NC60
VDSS 600V
RDS(on) < 2.2Ω
ID 4.2A
RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
3 1
DESCRIPTION Th |
 STMicroelectronics |
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| 2 | STB4NC60-1 | N-CHANNEL MOSFET STP4NC60 - STP4NC60FP STB4NC60-1
N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
TYPE STP4NC60 STP4NC60FP STB4NC60-1
s s s s s
VDSS 600V 600V 600V
RDS(on) < 2.2Ω < 2.2Ω < 2.2Ω
ID 4.2A 4.2A 4.2A
3 1 2
TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/ |
STMicroelectronics |
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| 1 | STB4NC60A-1 | N-CHANNEL MOSFET N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
TYPE STP4NC60A STP4NC60AFP STB4NC60A-1
s s s s s
STP4NC60A - STP4NC60AFP STB4NC60A-1
VDSS 600V 600V 600V
RDS(on) < 2Ω < 2Ω < 2Ω
ID 4.2A 4.2A 4.2A
3 1 2
TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv |
STMicroelectronics |
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