Datasheet STB16NS25 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STB16NS25	N-CHANNEL MOSFET STB16NS25 N-CHANNEL 250V - 0.23Ω - 16A D2PAK MESH OVERLAY™ MOSFET TYPE STB16NS25 s s s VDSS 250 V RDS(on) < 0.28 Ω ID 16 A TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 1 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ p	ST Microelectronics

STB16N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STB16NF06L	N-CHANNEL MOSFET N-CHANNEL 60V - 0.07 Ω - 16A D2PAK STripFET™ POWER MOSFET TYPE STB16NF06L s s s s s STB16NF06L VDSS 60 V RDS(on) <0.09 Ω ID 16 A TYPICAL RDS(on) = 0.07Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100 oC LOW THRESHOLD DRIVE SURFACE-MOUNTING D	ST Microelectronics
STB16NB25	N-CHANNEL MOSFET ® STB16NB25 N - CHANNEL 250V - 0.220Ω - 16A - TO-263 PowerMESH™ MOSFET TYPE ST B16NB25 s s s s s s V DSS 250 V R DS(on) < 0.28 Ω ID 16 A s TYPICAL RDS(on) = 0.220 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED EX	ST Microelectronics
STB16NK65Z-S	N-CHANNEL MOSFET STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH™ MOSFET Table 1: General Features TYPE STP16NK65Z STB16NK65Z-S s s s s s s Figure 1: Package ID 13 A 13 A Pw 190 W 190 W VDSS 650 V 650 V RDS(on) < 0.50 �	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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