Datasheet STAP85050 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	STAP85050	RF power transistor PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance wit	ST Microelectronics

STAP85 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
STAP85025S	N-channel enhancement-mode lateral MOSFETs STAP85025S RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet - production data STAP1 Figure 1. Pin connection Drain Description The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor.	STMicroelectronics
STAP85025	Transistors STAP85025 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD prot	ST Microelectronics
STAP85050	RF power transistor PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protecti	ST Microelectronics

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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