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Datasheet STAP85025 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | STAP85025 | Transistors
STAP85025
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Features
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Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance |
 ST Microelectronics |
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| 1 | STAP85025S | N-channel enhancement-mode lateral MOSFETs STAP85025S
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Datasheet - production data
STAP1 Figure 1. Pin connection
Drain
Description
The STAP85025S is a common source Nchannel, enhancement-mode lateral field-effect RF power transistor. It is designed for h |
 STMicroelectronics |
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