Datasheet SSPL2015D Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSPL2015D	N-Channel enhancement mode power field effect transistors Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-252  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body	Silikron Semiconductor

SSPL20 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSPL2015F	N-Channel enhancement mode power field effect transistors Main Product Characteristics VDSS RDS(on) 200V 0.13Ω(typ.) ID 18A ① Features and Benefits TO-220F  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switc	Silikron Semiconductor
SSPL2015	N-Channel MOSFET Main Product Characteristics VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A ① Features and Benefits TO - 220  Advanced Process Technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast swi	GOOD-ARK
SSPL2090	N-Channel enhancement mode power field effect transistors Main Product Characteristics: VDSS RDS(on) 200V 80mΩ(typ.) ID 30A TO220 Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast swi	Silikron Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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