Datasheet SSM6P36FE Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SSM6P36FE	Power Management Switches SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE ○ Power Management Switches • • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) Ron = 2.70 Ω (max) (@VGS = -1.8 V) Ron = 1.60 Ω (max) (@VGS = -2.8 V) Ron = 1.31 Ω (max) (@V	Toshiba Semiconductor

SSM6P3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SSM6P39TU	Field Effect Transistor SSM6P39TU TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type SSM6P39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications 0.65 0.65 2.0±0.1 Unit: mm 2.1±0.1 1.7±0.1 • • • 1.8 V drive P-ch 2-in-1 Low ON-resistance: 2 3 5 4 Absolu	Toshiba Semiconductor
SSM6P36TU	Field Effect Transistor SSM6P36TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36TU ○ Power Management Switches • • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) : Ron = 2.70 Ω (max) (@VGS = -1.8 V) : Ron = 1.60 Ω (max) (@VGS = -2.8 V) : Ron = 1.31 Ω (ma	Toshiba Semiconductor
SSM6P36FE	Power Management Switches SSM6P36FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P36FE ○ Power Management Switches • • 1.5-V drive Low ON-resistance: Ron = 3.60 Ω (max) (@VGS = -1.5 V) Ron = 2.70 Ω (max) (@VGS = -1.8 V) Ron = 1.60 Ω (max) (@VGS = -2.8 V) Ron	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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