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Datasheet SSM6N37FE Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SSM6N37FE   Field Effect Transistor

SSM6N37FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37FE ○ High-Speed Switching Applications ○ Analog Switching Applications • • • 1.5-V drive Suitable for high-density mounting due to compact package 1.6±0.05 1.0±0.05 0.5 0.5 単位: mm 1.6±0.05 1.2±0.05 Low O
Toshiba Semiconductor
Toshiba Semiconductor
datasheet SSM6N37FE pdf

SSM6N3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SSM6N37CTD

Power Management Switch Applications

SSM6N37CTD TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N37CTD ○ Power Management Switch Applications • • 1.5V drive Low ON-resistance Ron = 5.60 Ω (max) (@VGS = 1.5 V) Ron = 4.05 Ω (max) (@VGS = 1.8 V) Ron = 3.02 Ω (max) (@VGS =
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
SSM6N39TU

Field Effect Transistor

SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • • • 1.5-V drive N-ch 2-in-1 Low ON-resistance: Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 1 2 3 6 5 4 0.166±0.05 Ron
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor
SSM6N37FU

Field Effect Transistor

SSM6N37FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N37FU ○ High Speed Switching Applications ○ Analog Switch Applications • • 1.5Vdrive Low ON-resistance RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02
Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf - Toshiba Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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