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Datasheet SS8050LT1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | SS8050LT1 | NPN Epitaxial Silicon Transistor SS8050LT1 NPN Epitaxial Silicon Transistor
1.25W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION
SOT-23
Collector-Emitter Voltage: VCEO= 25V Collector Dissipation: PC= 625mW
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage Collecto |
 Elite |
 |
| 2 | SS8050LT1 | TRANSISTOR JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT¡ª 23
SS8050LT1
FEATURES
TRANSISTOR£¨NPN £©
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation PCM : 0.3 W£¨ Tamb=25¡æ£© Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 40 V Op |
 Jiangsu Changjiang Electronics |
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| 1 | SS8050LT1 | NPN General Purpose Transistors SS8050LT1
NPN General Purpose Transistors
P b Lead(Pb)-Free
1 2 3
SOT-23
V CEO Value 25 40 6.0 1500
625 5.0 200
SS8050LT1=Y1
0.1 100 100
25 40 6.0
)
E=20 Vdc, I E= 0 40 5.0
O
0.1 0.1 0.1
u
u u
WEITRON
http://www.weitron.com.tw
SS8050LT1
ELECTRICAL CHARACTERISTICS (TA |
 Weitron Technology |
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