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Datasheet SPW20N60S5 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 SPW20N60S5   Cool MOS Power Transistor

SPW20N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.19 20 P-TO247 V Ω A Type SPW20N60
 Infineon Technologies
Infineon Technologies		 datasheet SPW20N60S5 pdf

SPW20N6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SPW20N60C3

Cool MOS Power Transistor

&RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDUKLJKYROWDJHWHFKQRORJ •8OWUDORZJDWHFKDUJH • 3HULRGLFDYDODQFKHUDWHG •([WUHPHGYGWUDWHG • +LJKSHDNFXUUHQWFDSDELOLW • ,PSURYHGWUDQVFRQGXFWDQFH 63:1& VDS#Tjmax 5'6 RQ ,'    9 Ω $
 Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies
SPW20N60S5

Cool MOS Power Transistor

SPW20N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID 600 0.19 20 P-TO247 V
Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies
SPW20N60C2

Cool MOS Power Transistor

Final data SPW20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Product Summary VDS RDS(on) I
 Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies


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Número de pieza Descripción Fabricantes PDF
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 Sanken
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