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Datasheet SPP1013 Equivalent ( PDF )

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1 SPP1013   P-Channel Enhancement Mode MOSFET

SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and
SYNC POWER
SYNC POWER		 datasheet SPP1013 pdf

SPP1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SPP12N50C3

Power Transistor

SPP12N50C3, SPB12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved t
 Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies
SPP11N60C3

Cool MOS Power Transistor

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak cur
 Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies
SPP18P06P

SIPMOS Power-Transistor

Preliminary data SPP18P06P SPB18P06P SIPMOS ® Power-Transistor Features · Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175°C operating temperature
Infineon Technologies
Infineon Technologies		 datasheet pdf - Infineon Technologies


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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