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Datasheet SPN30 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | SPN30 | Universal Input Fully Enclosed Switching Power Supply
SPN30 Series
30 WATT, Universal Input Fully Enclosed Switching Power Supply
ELECTRICAL SPECIFICATIONS
All specifications are typical at nominal input, full load
INPUT SPECIFICATIONS
Input Voltage………..........................85 ~ 264VAC Input Frequency..................... |  Volgen Kaga Electronics | data |
| 2 | SPN3006 | N-Channel Enhancement Mode MOSFET SPN3006
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters usin |  SYNC POWER | mosfet |
| 3 | SPN3006T252RGB | N-Channel Enhancement Mode MOSFET SPN3006
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3006 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3006 has been designed specifically to improve the overall efficiency of DC/DC converters usin | SYNC POWER | mosfet |
| 4 | SPN3009 | N-Channel Enhancement Mode MOSFET SPN3009
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3009 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3009 has been designed specifically to improve the overall efficiency of DC/DC converters usin | SYNC POWER | mosfet |
| 5 | SPN3009T252RGB | N-Channel Enhancement Mode MOSFET SPN3009
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN3009 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPN3009 has been designed specifically to improve the overall efficiency of DC/DC converters usin | SYNC POWER | mosfet |
SPN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | SPN01N60C3 | Cool MOS Power Transistor Rev. 2.1
SPN01N60C3
VDS @ Tjmax RDS(on) ID 650 6 0.3
SOT-223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
V Ω A
3 2 1
VPS05163
Type
Pac  Infineon transistor | | |
| 2 | SPN01N60S5 | Cool MOS Power-Transistor
Preliminary data
SPN01N60S5
Cool MOS
Power-Transistor
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated Optimized capacitances Improved noise immunity
C O OLMO S
Power Semiconductors
Product Summary VDS @ Tjmax RDS(on) ID
SOT-223
ì
650 6  Infineon Technologies transistor | | |
| 3 | SPN02N60C3 | Power Transistor Rev. 2.1
SPN02N60C3
VDS @ Tjmax RDS(on) ID 650 3 0.4
SOT223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
V Ω A
low effective capacitances
3 2 1
VPS05163
Type SPN02N60C3
Pa Infineon Technologies transistor | | |
| 4 | SPN02N60S5 | Power Transistor SPN02N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated
• Ultra
VDS RDS(on) ID
600 3 0.4
SOT-223
4
V Ω A
low effective capacitances
• Improved transconductance
2 1
3
VPS05163
Typ Infineon Technologies transistor | | |
| 5 | SPN03N60C3 | Cool MOS Power Transistor Rev. 2.0
SPN03N60C3
VDS @ Tjmax RDS(on) ID 650 1.4 0.7
SOT-223
4
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances
V Ω A
3 2 1
VPS05163
Type
Package
Ordering Code
SPN03N6 Infineon Technologies transistor | | |
| 6 | SPN03N60S5 | Cool MOS Power Transistor SPN03N60S5 Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance
2 1
VPS05163
VDS RDS(on) ID
600 1.4 0.7
SOT-223
4
V Ω A
3
Type SPN03N60S5
Package Infineon Technologies transistor | | |
| 7 | SPN04N60C2 | Cool MOS Power Transistor Final data
SPN04N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology
• Worldwide best RDS(on) in SOT 223
Product Summary VDS RDS(on) ID 600 0.95 0.8
SOT-223
4
V Ω A
• Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Infineon transistor | |
| Esta página es del resultado de búsqueda del SPN30. Si pulsa el resultado de búsqueda de SPN30 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
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| Número de pieza | Descripción | Fabricantes | |
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