SPN03N60S5 データシート PDFこの部品の機能は「Cool Mos Power Transistor」です。 |
検索結果を表示する |
部品番号 |
SPN03N60S5 Cool MOS Power Transistor SPN03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transc Infineon Technologies |
文字列「 SPN03N60S5 」「 03N60S5 」で始まる検索結果です。 |
部品説明 |
03N60S5 SPP03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP03N60S5 VDS RDS(on) ID 600 V 1.4 Ω 3.2 A P INFINEON |
SPB03N60S5 Cool MOS Power Transistor SPP03N60S5 SPB03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-1 VDS RDS(on) ID P Infineon Technologies |
SPD03N60S5 Cool MOS Power Transistor SPU03N60S5 SPD03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID P-TO252. 2 3 Infineon Technologies |
SPP03N60S5 Power Transistor Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP03N60S5 VDS RDS(on) ID 600 V 1.4 Ω 3.2 A P Infineon Technologies |
SPU03N60S5 Cool MOS Power Transistor SPU03N60S5 SPD03N60S5 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance VDS RDS(on) ID P-TO252. 2 3 Infineon Technologies |
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