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Datasheet SPD02N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | SPD02N60 | SIPMO Power Transistor Preliminary data
SPD02N60 SPU02N60
SIPMOS® Power Transistor • N-Channel
• Enhancement mode
• Avalanche rated
Pin 1 G
Type SPD02N60 SPU02N60
Pin 2 D
Pin 3 S
VDS
ID
600 V 2 A
RDS(on) @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251
Ordering Code Q67040-S4133 Q67040-S4127-A2
Maximum |
 Siemens Semiconductor Group |
 |
| 5 | SPD02N60 | SIPMO Power Transistor Preliminary data
SPD02N60 SPU02N60
SIPMOS® Power Transistor • N-Channel
• Enhancement mode
• Avalanche rated
Pin 1 G
Pin 2 D
Pin 3 S
Type SPD02N60 SPU02N60
VDS
ID
600 V 2 A
RDS(on) @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251
Ordering Code Q67040-S4133 Q670 |
 Siemens Semiconductor |
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| 4 | SPD02N60C3 | Cool MOS& Power Transistor Final data
SPD02N60C3 SPU02N60C3
VDS @ Tjmax RDS(on) ID
P-TO251
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances
650 3 1.8
P-TO252
V Ω A
Type S |
 Infineon Technologies |
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| 3 | SPD02N60C3 | Cool MOS Power Transistor Final data
SPD02N60C3 SPU02N60C3
VDS @ Tjmax RDS(on) ID
P-TO251
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated
• Extreme
650 3 1.8
P-TO252
V Ω A
dv/dt rated
• Ultra low effectiv |
Infineon Technologies |
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