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Datasheet SPC6601 Equivalent ( PDF )

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1 SPC6601   N & P Pair Enhancement Mode MOSFET

SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- a nd P-Channel enhancement mode power field ef fect transistors ar e produced using high cell den sity , DMOS trench technolog y. This h igh density process is especially tailored to minimize on-state resistance an d provi
SYNC POWER
SYNC POWER
datasheet SPC6601 pdf

SPC6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
SPC6606

N & P Pair Enhancement Mode MOSFET

SPC6606 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6606 is the N-Channel and P-Channel enhancement mode power field effect transistors w h i c h are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize
SYNC POWER
SYNC POWER
datasheet pdf - SYNC POWER
SPC6605

N & P Pair Enhancement Mode MOSFET

SPC6605 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6605 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance
SYNC POWER
SYNC POWER
datasheet pdf - SYNC POWER
SPC6602ST6RG

N & P Pair Enhancement Mode MOSFET

SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistan
SYNC POWER
SYNC POWER
datasheet pdf - SYNC POWER


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SPS122

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