SMBT6427 データシート PDFこの部品の機能は「NPN SilICon Darlington Transistor」です。 |
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部品番号 |
SMBT6427 NPN Silicon Darlington Transistor NPN Silicon Darlington Transistor For general amplifier applications q High collector current q High current gain q SMBT 6427 Type SMBT 6427 Marking s1V Ordering Code (tape and reel) Q68000-A8320 Siemens Semiconductor Group |
文字列「 SMBT6427 」「 6427 」で始まる検索結果です。 |
部品説明 |
2N6427 NPN Darlington transistor DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N6427 NPN Darlington transistor Product specification File under Discrete Semiconductors, SC04 1997 Jul 04 Philips Semiconductors Product specification NPN Darlington transistor FEATURES • High current (max. 500 NXP Semiconductors |
2N6427 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR Samsung semiconductor |
2N6427 NPN Darlington Transistor 2N6427 / MMBT6427 Discrete POWER & Signal Technologies 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M Fairchild Semiconductor |
2N6427 Darlington Transistors(NPN Silicon) 2N6426, 2N6427 2N6426 is a Preferred Device Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltag ON Semiconductor |
2N6427 NPN Darlington Transistor National Semiconductor |
2N6427 (2N6426 / 2N6427) Darlington Transistors(NPN Silicon) MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6426/D Darlington Transistors NPN Silicon 2N6426 * 2N6427 *Motorola Preferred Device COLLECTOR 3 BASE 2 EMITTER 1 1 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base V Motorola Semiconductors |
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