Datasheet SIGC42T170R2C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SIGC42T170R2C	IGBT Chip SIGC42T170R2C IGBT Chip in NPT-technology FEATURES: • 1700V NPT technology • 280µm chip • positive temperature coefficient • easy paralleling • integrated gate resistor C This chip is used for: • chip only Applications: • drives G E Chip Type SIGC42T170R2C VC	Infineon Technologies

SIGC42T170 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SIGC42T170R3GE	IGBT3 Power Chip SIGC42T170R3GE IGBT3 Power Chip Features:  1700V Trench + Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power module Applications:  drives C G E Chip Type VCE	Infineon
SIGC42T170R3GG	IGBT Chip SIGC42T170R3GG IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E	Infineon Technologies
SIGC42T170R3	IGBT Chip SIGC42T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E C	Infineon Technologies

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