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Datasheet SI4800 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | SI4800 | N-channel TrenchMOS logic level FET SI4800
N-channel TrenchMOS™ logic level FET
M3D315 Rev. 02 — 17 February 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
1.2 Features
s Low gate charge s Low on-state resistance
s S |
 NXP Semiconductors |
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| 2 | SI4800BDY | Fast Switching MOSFET Si4800BDY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) (Ω) 0.0185 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 9 7
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFET
• High-Efficient PWM Optimized • 10 |
 Vishay |
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| 1 | SI4800DY | Fast Switching MOSFET Si4800DY
Vishay Siliconix
N-Channel Reducded Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.0185 @ VGS = 10 V 0.033 @ VGS = 4.5 V
ID (A)
9 7
D D
D D
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4800DY Si4800DY-T1 (with Tape and Reel) 8 7 6 5 D D D D N-Channel MOSFE |
Vishay |
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