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SI2305 データシート PDF 検索

番号 部品番号 部品説明 メーカ PDF
7 SI2305

p-Channel MOSFET

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ETC
ETC
SI2305 データシート pdf
6 SI2305

20V P-Channel Enhancement Mode MOSFET

SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G

HT Semi
HT Semi
SI2305 データシート pdf
5 SI2305

P-Channel Enhancement Mode Field Effect Transistor

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2305 • • • • • • • • Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 TrenchFET Power MOSFET Load Switch for Portab

MCC
MCC
SI2305 データシート pdf
4 SI2305ADS

P-Channel 8-V (D-S) MOSFET

www.Datasheet.jp New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES ID (A) - 4.1 - 3.4 - 2.0 7.8 nC Qg (Typ.) PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.040 at VGS = - 4.5 V -8 0.060 at VGS = - 2.5 V 0.088 at VGS = - 1.8 V • Halogen-free Option Available • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS COMPLIANT APPLICATIONS • Load Switch

Vishay Siliconix
Vishay Siliconix
SI2305ADS データシート pdf
3 SI2305CDS

P-Channel 8 V (D-S) MOSFET

www.Datasheet.jp Si2305CDS Vishay Siliconix P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) 0.035 at VGS = - 4.5 V 0.048 at VGS = - 2.5 V 0.065 at VGS = - 1.8 V ID (A)d - 5.8 - 5.0 - 4.3 12 nC Qg (Typ.) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/

Vishay Siliconix
Vishay Siliconix
SI2305CDS データシート pdf
2 SI2305DS

P-Channel Power MOSFE

P-Channel Power MOSFE Production specification SI2305DS DESCRIPTION SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone

TOPSKY
TOPSKY
SI2305DS データシート pdf
1 SI2305DS

P-Channel 1.25-W/ 1.8-V (G-S) MOSFET

Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) 0.052 @ VGS = –4.5 V 0.071 @ VGS = –2.5 V 0.108 @ VGS = –1.8 V ID (A) "3.5 "3 "2 TO-236 (SOT-23) G 1 3 S 2 D Top View Si2305DS (A5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Cont

Vishay Siliconix
Vishay Siliconix
SI2305DS データシート pdf


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