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Datasheet SI1039X Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | SI1039X | P-Channel 1.8-V (G-S) MOSFET SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charg |
 Vishay Siliconix |
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| 2 | SI1039X | P-Channel 2.5-V (G-S) MOSFET SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charg |
Vishay Siliconix |
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| 1 | SI1039X-T1 | P-Channel 1.8-V (G-S) MOSFET SPICE Device Model Si1039X Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charg |
Vishay Siliconix |
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