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Datasheet SI1013 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | SI1013 | (SI1010 - SI1015) Ultra Low Power ADC Si1010/1/2/3/4/5
Ultra Low Power, 16/8 kB, 12/10-Bit ADC MCU with Integrated 240–960 MHz EZRadioPRO® Transceiver Ultra Low Power: 0.9 to 3.6 V Operation - Typical sleep mode current < 0.1 µA; retains state and RAM contents over full supply range; fast wakeup of < 2 µs Less than 600 nA with RTC |
 Silicon Laboratories |
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| 3 | SI1013CX | MOSFET ( Transistor ) www.vishay.com
Si1013CX
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.760 at VGS = -4.5 V
-20 1.040 at VGS = -2.5 V
1.500 at VGS = -1.8 V
ID (A) -0.45 -0.40 -0.32
Qg (TYP.) (nC) 1
SC-89 (3 leads)
D 3
1 G Top View
2 S
Marking Code: 6
Ordering Inform |
 Vishay |
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| 2 | SI1013R | P-Channel 1.8-V (G-S) MOSFET Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V
ID (mA)
–350 –300 –150
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) F |
 Vishay Siliconix |
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| 1 | SI1013X | P-Channel 1.8-V (G-S) MOSFET Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V
ID (mA)
–350 –300 –150
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) F |
Vishay Siliconix |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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