Datasheet SBT5551F Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	SBT5551F	NPN Silicon Transistor Semiconductor SBT5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with SBT5401F Ordering	AUK corp

SBT55 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
SBT5551	NPN Silicon Transistor Semiconductor SBT5551 NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with	AUK corp
SBT5551F	NPN Silicon Transistor Semiconductor SBT5551F NPN Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • high collector breakdown voltage : VCBO = 180V, VCEO = 160V • Low collector saturation voltage : VCE(sat)=0.5V(MAX.) • Complementary pair with	AUK corp

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Número de pieza	Descripción	Fabricantes	PDF
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