SBR12U45LH データシート PDFこの部品の機能は「Super Barrier Rectifier」です。 |
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部品番号 |
SBR12U45LH SUPER BARRIER RECTIFIER NEW PRODUCT Product Summary VRRM (V) 45 IO (A) 12 VF typ @ 125*C (V) 0.38 IR max @ VRRM (mA) 0.3 Description and Applications The SBR12U45LH uses SBR patented technology that offers ultra low VF Diodes |
文字列「 SBR12U45 」「 12U45LH 」で始まる検索結果です。 |
部品説明 |
SBR12U45LH1 SUPER BARRIER RECTIFIER Green SBR12U45LH1 12A SBR® SUPER BARRIER RECTIFIER POWERDI®5SP-B Product Summary VRRM (V) 45 IO(A) 12 VF(typ) @ +125°C (V) 0.38 IR(MAX) @ VRRM (mA) 0.3 Description The SBR12U45LH1 uses SBR patented technology that offers ultralow VF to reduce forward power loss and i Diodes |
2SA1245 Silicon PNP Epitaxial Planar Transistor TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications 2SA1245 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter Toshiba Semiconductor |
2SB1245 (2SB1244 / 2SB1245) LOW FREQUENCY HIGH VOLTAGE AMPLIFIER w w .D w t a S a e h t e U 4 .c m o w w w .D a S a t e e h U 4 t m o .c Hitachi Semiconductor |
2SD1245 SI NPN TRIPLE DIFFUSED PLANAR DARLINGTON Panasonic Semiconductor |
2SD1245 Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification 2SD1245 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 2A APPLICATIONS ·Designed for general purpose amplifie Inchange Semiconductor |
2SK1245 Power MOSFET ( Transistor ) ETC |
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