S3076 データシート PDFこの部品の機能は「Multi-rate Sonet/sdh Clock Recovery Unit」です。 |
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部品番号 |
S3076 Multi-Rate Sonet/SDH Clock Recovery Unit m o S3076 MULTI-RATE SONET/SDH c CLOCK RECOVERY UNIT . S3076 MULTI-RATE SONET/SDH CLOCK RECOVERY UNIT BiCMOS PECL CLOCK UGENERATOR 4 t FEATURES GENERAL DESCRIPTION e e The function of the S3076 clock Applied Micro Circuits |
文字列「 S3076 」「 3076 」で始まる検索結果です。 |
部品説明 |
S30760 Silicon Power Rectifier Microsemi Corporation |
S3076TT Multi-Rate Sonet/SDH Clock Recovery Unit m o S3076 MULTI-RATE SONET/SDH c CLOCK RECOVERY UNIT . S3076 MULTI-RATE SONET/SDH CLOCK RECOVERY UNIT BiCMOS PECL CLOCK UGENERATOR 4 t FEATURES GENERAL DESCRIPTION e e The function of the S3076 clock recovery unit is to h • SiGe BiCMOS technology high speed timing signals for S Applied Micro Circuits |
2SC3076 Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 μs (typ.) • Comple Toshiba Semiconductor |
2SC3076 Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ.) +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 Kexin |
2SK3076 Silicon N Channel MOS FET High Speed Power Switching 2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S Hitachi Semiconductor |
2SK3076L Silicon N Channel MOS FET High Speed Power Switching 2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S Hitachi Semiconductor |
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