S29GL01GS データシート PDFこの部品の機能は「3.0v Gl-s Flash Memory」です。 |
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部品番号 |
S29GL01GS 3.0V GL-S Flash Memory S29GL01GS, S29GL512S S29GL256S, S29GL128S 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte), 256 Mbit (32 Mbyte), 128 Mbit (16 Mbyte), 3.0V GL-S Flash Memory General Description The Cypress® S29GL01G/512/256/ Cypress Semiconductor |
S29GL01GS Non-Volatile Memory Family GL-S MirrorBit® Eclipse™ Flash Non-Volatile Memory Family S29GL01GS S29GL512S S29GL256S S29GL128S Data Sheet 1 Gbit 512 Mbit 256 Mbit 128 Mbit (128 Mbyte) (64 Mbyte) (32 Mbyte) (16 Mbyte) GL-S M SPANSION |
文字列「 S29GL01 」「 29GL01GS 」で始まる検索結果です。 |
部品説明 |
S29GL016A 16 Megabit 3.0-Volt only Page Mode Flash Memory S29GL-A MirrorBit® Flash Family S29GL064A, S29GL032A, and S29GL016A 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology S29GL-A Cover Sheet Data Sheet The S29GL064A and S29GL032A will not SPANSION |
S29GL01GP Page Mode Flash Memory S29GL-P MirrorBitTM Flash Family S29GL01GP, S29GL512P, S29GL256P, S29GL128P 1 Gigabit, 512 Megabit , 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology S29GL-P MirrorBitTM Flash Family Cover Sheet Da SPANSION |
S29GL01GP Page Flash S29GL01GP S29GL512P S29GL256P S29GL128P 1 Gbit, 512, 256, 128 Mbit, 3 V, Page Flash with 90 nm MirrorBit Process Technology General Description The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast pag Cypress Semiconductor |
S29GL01GT MirrorBit Eclipse Flash Memory Devices S29GL01GT, S29GL512T 1 Gbit (128 Mbyte), 512 Mbit (64 Mbyte) GL-T MirrorBit® Eclipse™ Flash General Description The Cypress® S29GL01GT/512T are MirrorBit® Eclipse™ flash products fabricated on 45 nm process technology. These devices offer a fast page access time as fast a Cypress Semiconductor |
2SC2901 NPN SILICON TRANSISTOR NEC |
2SC2901 NPN Silicon Epitaxial Planar Transistor ST 2SC2901 NPN Silicon Epitaxial Planar Transistor for general purpose amplifier and high speed switching applications. The transistor is subdivided into two groups L and K, according to its DC current gain. On special request, these transistors can be manufactured in different p SEMTECH |
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