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Datasheet S2353 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S2353 | Diode, Rectifier |  American Microsemiconductor | diode |
S23 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S23 | Schottky Rectifiers SS22-S210
SS22 - S210
Features • • •
Glass passivated junctions. High current capability, low VF. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings*
Symbo  Fairchild Semiconductor rectifier | | |
| 2 | S2301 | N-channel SiC power MOSFET bare die S2301
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 80mW 40A*1
Data Sheet
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive
lInner circuit
(D)
(G) (S)
(G) Gate (D) Drain (S) Source
*1 Body Diode
lApplica  ROHM Semiconductor mosfet | | |
| 3 | S2305 | N-channel SiC power MOSFET bare die S2305
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 450mW 10A*1
Data Sheet
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive
lInner circuit
(D)
(G) (S)
(G) Gate (D) Drain (S) Source
*1 Body Diode
lApplic ROHM Semiconductor mosfet | | |
| 4 | S2308 | N-channel SiC power MOSFET bare die S2308
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 280mW 14A*1
Data Sheet
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive
lInner circuit
(D)
(G) (S)
(G) Gate (D) Drain (S) Source
*1 Body Diode
lApplic ROHM Semiconductor mosfet | | |
| 5 | S230C | STPS230C ST Microelectronics data | | |
| 6 | S2353 | Diode, Rectifier American Microsemiconductor diode | | |
| 7 | S2370 | Field Effect Transistor Toshiba Semiconductor transistor | |
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