S2140 データシート PDFこの部品の機能は「SilICon Power Rectifier」です。 |
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部品番号 |
S2140 Silicon Power Rectifier Microsemi Corporation |
文字列「 S2140 」「 2140 」で始まる検索結果です。 |
部品説明 |
2SA2140 Silicon PNP Power Transistor INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min) ·Good Linearity of hFE APPLICATIONS ·Designed for power amplification and for TV VM circuit. ABSOLUTE MAXIMUM Inchange Semiconductor |
2SA2140 Silicon PNP Epitaxial Transistor Power Transistors 2SA2140 Silicon PNP epitaxial planar type Unit: mm 3.0±0.5 For power amplification For TV VM circuit ■ Features • Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package wh Panasonic Semiconductor |
2SA2140 Silicon PNP Power Transistor C/ 'J , Unc. TELEPHONE: (973) 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA2140 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEo=-180V(Min) • Good Linearity of hFE 1 ppf i 2 < New Jersey Semi-Conductor |
2SA2140 Trans GP BJT PNP 180V 1.5A 3-Pin(3+Tab) TO-220D-A1 New Jersey Semiconductor |
2SC2140 SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2140 DESCRIPTION ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching regulator applications ·High speed DC-DC converter applications PINNING (See Fig.2) PIN SavantIC |
2SD2140 Power Transistor INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2140 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1421 APPLICATIONS ·Designed for high power amplifications. Inchange Semiconductor |
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