S14K175 データシート PDFこの部品の機能は「(s14kxxx) Metal-oxide Varistor」です。 |
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部品番号 |
S14K175 (S14Kxxx) METAL-OXIDE VARISTOR www.Datasheet.jp www.Datasheet.jp www.DataSheet4U DataSheet4U.com Siemens |
S14K175 (S14Kxxx) Varistor Transient Suppressor www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp www.Datasheet.jp www.DataShe Siemens |
文字列「 S14K175 」「 14K175 」で始まる検索結果です。 |
部品説明 |
ETFV14K175E2 SIOV metal oxide varistors SIOV metal oxide varistors Housed (ThermoFuse) varistors, AdvanceD series Series/Type: Date: ETFV14 April 2011 © EPCOS AG 2011. Reproduction, publication and dissemination of this publication, enclosures hereto and the information contained therein without EPCOS' prior expres EPCOS |
HD14175 Quadruple D-type Flip Flop 19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight (reference value) + 0.13 DP-16 Conforms Conforms 1.07 g Cautions 1. Hitachi neither warrant Hitachi Semiconductor |
HD14175B Quadruple D-type Flip Flop 19.20 20.00 Max 16 9 7.40 Max 6.30 Unit: mm 1 1.3 1.11 Max 8 0.51 Min 2.54 Min 5.06 Max 7.62 2.54 ± 0.25 0.48 ± 0.10 0.25 – 0.05 0° – 15° Hitachi Code JEDEC EIAJ Weight (reference value) + 0.13 DP-16 Conforms Conforms 1.07 g Cautions 1. Hitachi neither warrant Hitachi Semiconductor |
HYB314175BJ-50 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle Siemens Semiconductor Group |
HYB314175BJ-50- 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle Siemens Semiconductor Group |
HYB314175BJ-55 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle Siemens Semiconductor Group |
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