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S12EETS2KV1D データシート PDF

この部品の機能は「Mc9s12dt128 DevICe User Guide V02.09」です。


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部品番号
S12EETS2KV1D

MC9S12DT128 Device User Guide V02.09


DOCUMENT NUMBER 9S12DT128DGV2/D MC9S12DT128 Device User Guide V02.09 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128, MC9S12DB128 Original Release Date: 18 June 2001 R


Motorola Semiconductors
Motorola Semiconductors

データシート pdf



文字列「 S12EETS2KV1 」「 12EETS2KV1D 」で始まる検索結果です。

部品説明

S12EETS2KV1

MC9S12DT128 Device User Guide V02.09

DOCUMENT NUMBER 9S12DT128DGV2/D MC9S12DT128 Device User Guide V02.09 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128, MC9S12DB128 Original Release Date: 18 June 2001 Revised: 15 October 2003 Motorola, Inc Motorola reserves the right to make chang

Motorola Semiconductors
Motorola Semiconductors

 データシート pdf


2SA1221

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary

NEC
NEC

 データシート pdf


2SB1221

Silicon PNP Epitaxial Transistor

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector

Panasonic Semiconductor
Panasonic Semiconductor

 データシート pdf


2SB1221

Silicon NPN triple diffusion planer type(For high breakdown voltage general amplification)

Transistor 2SB1221 Silicon PNP epitaxial planer type For general amplification Complementary to 2SC3941 Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector

Panasonic Semiconductor
Panasonic Semiconductor

 データシート pdf


2SD1221

Silicon NPN Diffused Type Transistor

TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 2SD1221 Audio Frequency Power Amplifier Application Unit: mm • Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) • High power dissipation: PC = 20 W (Tc = 25°C) • Comple

Toshiba Semiconductor
Toshiba Semiconductor

 データシート pdf


2SD1221

NPN Transistors

SMD Type Transistors NPN Transistors 2SD1221 ■ Features ● Low collector saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) ● High power dissipation: PC = 20 W (Tc = 25°C) ● Complementary to 2SB906 +9.70 0.2 -0.2 TO-252 6.50+0.15 -0.15 5.30+0.2 -0.2

KEXIN
KEXIN

 データシート pdf

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