S10A20 データシート PDFこの部品の機能は「Diode ( Rectifier )」です。 |
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部品番号 |
S10A20 Diode ( Rectifier ) American Microsemiconductor |
文字列「 S10A20 」「 10A20 」で始まる検索結果です。 |
部品説明 |
S10A20A Diode ( Rectifier ) American Microsemiconductor |
S10A20B Diode ( Rectifier ) American Microsemiconductor |
2SA1020 TRANSISTOR (POWER AMPLIFIER APPLICATIONS) 2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary Toshiba Semiconductor |
2SA1020 TO-92MOD Plastic-Encapsulated Transistors Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors 2SA1020 FEATURES Power dissipation PCM : 900 mW (Tamb=25℃) TRANSISTOR (PNP) TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE Collector current : -2 A ICM Collector-base voltage V V(BR)CBO : -50 Operating an ETC |
2SA1020 PNP EPITAXIAL SILICON TRANSISTOR UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. 1 FEATURES *Low collector saturation voltage: VCE(sat)=-0.5V(max.) (IC=-1A) *High speed switching time: t Unisonic Technologies |
2SA1020 One Watt High Current PNP Transistor VOLTAGE AND CURRENT ARE NEGATIVE 2SA1020 Preferred Device One Watt High Current PNP Transistor Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Power D ON Semiconductor |
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